1 / 7 xian l ongtium m icroelectronics technology developing co., ltd. f ea t u re s ? high ruggedness ? rds(on) (max 9 ? )@vg s=10v ? ga t e charge (max 6 nc) ? improved dv/dt capability ? 100% avalanche tested general description ? t his po w er m os f et is produ c ed w i t h ad v an c ed v dm os t e c hnology of longtiumic . ? t his t e c hnology enable po w er m os f et t o ha v e be tt er c hara ct eri st i cs , ? such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. ? this power mosfet is usually used at ac adaptors and smps . n - c h a nn el m o sfe t o r d e r c o d e s i t em sales t y pe m ar k ing pa c k age pa c k aging 1 lt c 1 n 60c lt 1 n 60c t o - 92 t ape 2 lt i 1 n 60c lt 1 n 60c t o - 251 t u be 3 lt d 1 n 60c lt 1 n 60c t o - 252 r eel lt 1 n6 0 n - channel mosfet 2
lt 1n60 xian l ongtium m icroelectronics technology developing co., ltd. 2 / 7 a b s o l u t e m ax i m u m r at i n g s s y m bol para m e t er value u nit t o - 92 t o - 251 t o - 252 v d ss d rain t o sour c e vol t ag e 600 v i d c on t inuous d rain c urrent ( @ t c = 25 o c) 0 . 8 1 . 0 a c on t inuous d rain c urrent ( @ t c = 100 o c) 0 . 5 0 . 65 a i dm d rain c urrent pul s ed (no t e 1) 2 . 0 4 . 0 a v gs ga t e t o sour c e vol t age 30 v e as single pul s ed a v alan c he energy (no t e 2) 52 mj e ar r epe t i t i v e a v alan c he energy (no t e 1) 0 . 3 mj d v/ dt peak diode r e c o v ery d v/ dt (no t e 3) 4 . 5 v / ns p d t o t al po w er di ss ipa t ion ( @ t c = 25 o c) 3 30 w d era t ing f a ct or abo v e 2 5 o c 0 . 025 0 . 23 w / o c t s t g , t j opera t ing j un ct ion t e m pera t ure & s t orage t e m pera t ure - 55 ~ + 150 o c t l m a x i m um lead t e m pera t ure f or s oldering purpo s e, 1 / 8 f rom c a s e f or 5 s e c ond s . 260 275 o c * . d ra i n c u rre n t i s li m i t e d b y j un ct i o n t e m pera t u re . thermal characteristics s y m b ol para m e t er value u nit t o - 92 t o - 251 t o - 252 r t hj c t her m al re s i st an c e, j un ct ion t o c a s e - 4 . 2 o c / w r t hc s t her m al re s i st an c e, j un ct ion t o lead m ax 40 - o c / w r t hj a t her m al re s i st an c e, j un ct ion t o a m bient 120 100 o c / w
lt 1n60 xian l ongtium m icroelectronics technology developing co., ltd. 3 / 7 electrical characterist ic ( t c = 25 o c un l e ss o t her w i se s pe c i f i e d ) sym bo l pa r ameter t est c ondi t ion s min. t y p . m ax. unit off c h a r acte r i st i cs b v d ss d rain t o s our c e brea k do w n v ol t age v gs = 0 v , i d = 2 5 0 u a 600 - - v i d ss d rain t o s our c e lea k age c urrent v d s = 6 0 0 v , v gs = 0v - - 1 ua v d s = 4 8 0 v , t c = 1 2 5 o c - - 10 ua i g ss ga t e t o s our c e lea k age c urren t , f or w ard v gs = 3 0 v, v d s = 0v - - 100 na ga t e t o s our c e lea k age c urren t , re v er s e v gs = - 3 0 v, v d s = 0v - - - 100 na on c h a r acte r i st i cs v g s( t h ) ga t e t hre s hold v ol t age v d s =v gs , i d = 2 5 0 u a 2 . 0 - 4 . 0 v r d s( o n ) d rain t o s our c e on st a t e re s i st an c e v gs = 1 0 v, i d = 0 . 5a 5 9 ? d y n am i c c h a r acte r i st i cs c i ss i nput c apa c i t an c e v gs = 0 v , v d s = 2 5 v, f = 1 mh z - 120 150 pf c o ss ou t put c apa c i t an c e - 18 25 c rss r e v er s e t ran sf er c apa c i t an c e - 4 6 t d ( o n ) t urn on delay t i m e v d s = 3 0 0 v , i d = 1 . 0 a , r g = 2 5 ? - 15 35 ns tr r i s ing t i m e - 75 140 t d ( o ff ) t urn o f f delay t i m e - 30 60 t f f all t i m e - 35 60 q g t o t al ga t e c harge v d s = 4 8 0 v , v gs = 1 0 v, i d = 1 . 0a - 7 9 nc q gs ga t e - s our c e c harge - 1 . 3 - q gd ga t e - drain c harge - 2 . 4 - source to drain diode ratings characteristics sym bo l pa r ameter t est c ondi t ion s min. t y p . m ax. unit i s c on t inuous s our c e c urrent i n t e g ral re v er s e p - n j u n ct ion di o de in t he m o s f et - - 1 . 0 a i sm pul s ed s our c e c urrent - - 4 . 0 a v sd d i ode f or w ard v ol t age drop. i s = 1 . 0 a , v gs = 0v - - 1 . 5 v t rr r e v er s e re c o v ery t i m e i s = 1 . 0 a , v gs = 0 v , d i f / d t = 1 0 0 a / us - 190 - ns q rr brea k do w n v ol t age t e m pera t ure - 0 . 44 - uc . n o t e s 1 . r epea t i t iv e ra t i n g : p u ls e w i d th li m i t e d b y j un ct i o n t e m pera t u re . 2 . l = 95 m h , i as = 1 . 0 a , v d d = 50 v , r g =25 ? , s t ar t i n g t j = 25 o c 3 . i sd 1 . 0 a , d i / d t = 300 a / u s , v d d b v d ss , s t ar i n g t j =25 o c 4 . p u ls e te s t : p u ls e w i d th 300 u s , d u ty c y c l e 2 % 5 . e ss e n t i a l l y i n dep e n de n t o f opera ti n g t e m pera t u re .
lt 1n60 xian l ongtium m icroelectronics technology developing co., ltd. 4 / 7 f i g . 1 . o n - stat e c h a r acte r i st i c s f i g . 2 . t r a n sfe r c h a r acte r i st i c s f i g . 3 . o n - r es i sta n c e v a r i at i o n v s . f i g . 4 . on stat e c urr e n t v s . d r a in c urr e n t a n d g at e v o l t a g e d i od e f o r w a r d v o l t a g e f i g . 5 . ca p ac i t a n c e c h a r acte r i st i c s f i g . 6 . g at e c h a r g e c h a r acte r i st i c s ( n o n - re p et i t i v e )
lt 1n60 xian l ongtium m icroelectronics technology developing co., ltd. 5 / 7 fig 7. breakdown voltage variation f i g . 8 . on r es i sta n c e v a r i at i o n vs. junction temperature v s . j un ct i o n t e m p e r at ur e f i g . 9 . m ax i m u m d r a in c urr e n t v s . f i g . 10 . m ax i m u m saf e op e r at i n g a r e a ( to - 220) cas e te m p e r at ur e . f i g . 11 . t r a n s i e n t t h e rm a l r es po n s e c ur v e
lt 1n60 xian l ongtium m icroelectronics technology developing co., ltd. 6 / 7 f i g . 12 . g at e c h a r g e tes t c i r c u it & w a v ef o r m f i g . 13 . s w itc h i n g t i m e t es t c i r c u it & w a v ef o r m f i g . 1 4 . u n c l a m p ed i n d u c t i v e sw it c h i n g t e s t c i r c u it & w a v e f o r m
lt 1n60 xian l ongtium m icroelectronics technology developing co., ltd. 7 / 7 f i g . 15 . p ea k d i od e r ec o v e r y d v / d t tes t c i r c u it & w a v ef o r m
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